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The MeasureReady® M91 is an immensely powerful and versatile all-in-one Hall Effect measurement system. With automated measurement optimization, fast measurement speeds, and easy to use interface, the M91 makes analyzing samples under 4-point or Hall Bar incredibly simple. It makes for a comprehensive Hall measurement setup when paired with the Instec HCP621G-PMH and M06T.
Lakeshore M91 FastHall Measurement Controller
PRODUCT INQUIRY
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Description
An all-in-one Hall analysis system, the M91 Fast Hall controller can be used with any magnet system and adds state of the art Hall measurement capabilities to any lab. The unique and powerful software and computation of the M91 removes the need for polarity switching of magnets and enables incredibly fast and accurate measurement even for low mobility samples.
It combines the features of a switching matrix, data collection software, nanovoltmeter, current source, contact evaluator, and Hall analysis software in one easy to use touchscreen unit. It can be used with permament magnets, electromagnets, superconducting magnets, and has measurement capabilities down to 10-3 cm2/Vs -
Electrical Specifications
Hall Voltage Resolution
1µV
Noise
0.1 µV (RMS)
Resistance Range
10mΩ to 10MΩ, up to 200GΩ with optional upgrade
Hall Mobility
10-3 to 106 cm2/V s, automatically calculated by software
Connectors
Triaxial BNC
Measurement Loops
Up to 3 Sourcing and 3 Measurement Ports
Typical measurement time
A few seconds
Power Requirement
100V to 240V (universal)
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Operational Specifications
Size
216 mm × 87 mm × 369 mm
(8.5 in × 3.4 in × 14.5 in), half rack
Weight
3.2kg
Certification
CE Mark
Warm-up Time
30 Minutes
Power Consumption
35W Maximum
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Example Test Materials
Solar cells
OPVs, a:Si, µc-Si, CdTe, CuInGaSe
Organic electronics
OTFTs, Pentacene, Chalcogenides, OLEDs
Transparent conducting oxides
InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)
III-V semiconductors
InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors
II-VI semiconductors
CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
Elemental semiconductors
Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs
Transition-metal Di-chalcogenides (TMDC)
WS2, WSe2, MoS2, HfS2
Other conducting materials
Metal oxides Organic and inorganic conductors
And More...